germanium silicon us6180480

Patent US20060141701 - Semiconductor …

A semiconductor device having a trench capacitor is disclosed. The trench is formed on the surface of a semiconductor substrate. A first insulating film is formed on ...

Patent US7405438 - Capacitor constructions …

The rugged surfaces can be, for example, rugged silicon. The invention includes a method of forming a rugged semiconductor-containing surface.

Patent US6653678 - Reduction of polysilicon …

A Deep Trench (DT) capacitor in a semiconductor substrate has an isolation collar formed on trench sidewalls above the DT bottom. An outer plate is formed below the ...

Patent US20050035389 - Dynamic random …

DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

Patent US5897370 - High aspect ratio low …

High aspect ratio low resistivity lines/vias by ... US6180480 * 28. ... International Business Machines Corporation: Germanium or silicon-germanium deep trench fill ...

Patent US4853076 - Semiconductor thin …

Try the new Google Patents, ... US6180480: 28 Sep 1998: 30 Jan ... Protecting silicon germanium sidewall with silicon for strained silicon/silicon germanium MOSFETs:

Patent US20080265299 - Strained channel …

US6180480 * 28 Sep 1998: 30 Jan 2001: ... Germanium or silicon-germanium deep trench fill by melt-flow process: US6191432 * 2 Sep 1997: 20 Feb 2001: Kabushiki Kaisha ...

Patent US20050035389 - google.com.ar

Relaxed silicon-germanium (SiGe) virtual substrates, including a tensilely strained layer and a relaxed underlying layer, ... US6180480 * 28 Sep 1998: 30 Jan 2001:

Patent US5130885 - Dram cell in which a …

A dynamic random access memory cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for the capacitive surface of the storage ...

Patent US20050287760 - Method for …

US6180480 * 28 Sep 1998: 30 Jan 2001: International Business Machines Corporation: Germanium or silicon-germanium deep trench fill by melt-flow process: US6291875 *

Patent US7439128 - Method of creating …

The present invention comprises a method including the steps of providing a substrate; forming a trench in the substrate; forming a buried plate in the substrate ...

Patent US20030030091 - Dynamic random …

DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined ...

Patent US5897370 - High aspect ratio low …

US6180480 * 28 Sep 1998: 30 Jan 2001: International Business Machines Corporation: Germanium or silicon-germanium deep trench fill by melt-flow process: US6208016:

Patent US6552380 - Semiconductor device …

Next, a heat treatment is performed on the silicon germanium film thereby to flow only the silicon germanium so that the trench is filled.

Patent US20050287760 - Method for …

The invention discloses a novel flexible, modular fabrication method for integrated high aspect ratio single crystal silicon microstructures designed and manufactured ...

Patent US4526631 - Method for forming a …

The void-free pattern of isolation in a semiconductor substrate is described. There is contained within a semiconductor body a pattern of substantially vertically ...

Methods of forming dynamic random access …

US6180480 * 28 Sep 1998: 30 Jan 2001: ... Germanium or silicon-germanium deep trench fill by melt-flow process: US6191432 * 2 Sep 1997: 20 Feb 2001: Kabushiki Kaisha ...

Patent US5130885 - Dram cell in which a …

Dram cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for a capacitive surface US 5130885 A

Patents - Google Books

Patents Try the new Google Patents, with machine-classified Google Scholar results, and Japanese and South Korean patents. Publication number: US6891209 B2 ...

Patent US20050196932 - Method of …

US6180480 * 28 Sep 1998: 30 Jan 2001: International Business Machines Corporation: Germanium or silicon-germanium deep trench fill by melt-flow process: US6204103 *

Germanium or silicon-germanium deep …

Germanium or silicon-germanium deep trench fill by melt-flow process Abstract. A trench capacitor comprising a substrate, a trench formed in the substrate, and ...

Patent US5147819 - Semiconductor …

Try the new Google Patents, ... US6180480: 28 Sep 1998: 30 Jan ... International Business Machines Corporation: Germanium or silicon-germanium deep trench fill by ...

Patent US5254873 - Trench structure having …

A trench structure (10) using germanium silicate. The trench structure (10) has a substrate material (12) and a hard mask material (14) that overlies the substrate ...

Patent US6989560 - Semiconductor device …

Since at least a portion of a trench capacitor electrode is formed by a metal, the electrical sheet resistance of the electrode can be lowered, and the signal ...

Patent US5677219 - Process for fabricating a …

Try the new Google Patents, ... US6180480 * 28 Sep 1998: 30 Jan ... International Business Machines Corporation: Germanium or silicon-germanium deep trench fill by ...

Patent US6180480 - Germanium or silicon …

A trench capacitor comprising a substrate, a trench formed in the substrate, and conductive doped germanium or silicon-germanium alloy fill material completely ...

Patent US7410861 - Methods of forming …

DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

Патент US20030030091 - Dynamic random …

DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.

Patent US6537370 - Process for obtaining a …

Process for obtaining a layer of single-crystal germanium on a substrate of single-crystal silicon, and products obtained US 6537370 B1

Patent US6670257 - Method for forming …

Method for forming horizontal buried channels or cavities in wafers of monocrystalline ... US6180480 * 28 Sep 1998: 30 Jan ... Germanium or silicon-germanium deep ...

Patent US6537370 - Process for obtaining a …

The invention concerns a method which consists in: (a) stabilization of the monocrystalline silicon substrate temperature at a first predetermined temperature T1 …

Patent US5994718 - Trench refill with …

A trench refill for a semiconductor device is undertaken by depositing polycrystalline Ge or Ge x Si 1-x alloy at temperatures as low as 500° C. The structure is ...